Variations in structural and electrical properties of magnetron-sputtered indium tin oxide films with deposition parameters
- 1 August 1988
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 162, 119-127
- https://doi.org/10.1016/0040-6090(88)90200-3
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Evaporated Sn-doped In2O3 films: Basic optical properties and applications to energy-efficient windowsJournal of Applied Physics, 1986
- Characterization of tin doped indium oxide films prepared by electron beam evaporationSolar Energy Materials, 1986
- The influence of substrate temperature and sputtering gas atmosphere on the electrical properties of reactively sputtered indium tin oxide filmsThin Solid Films, 1986
- Preparation and characterization of rf sputtered indium tin oxide filmsJournal of Applied Physics, 1985
- Transparent conductors—A status reviewThin Solid Films, 1983
- Electrical properties and defect model of tin-doped indium oxide layersApplied Physics A, 1982
- Heat mirror coatings for energy conserving windowsSolar Energy Materials, 1981
- Deposition of In2O3SnO2 layers on glass substrates using a spraying methodThin Solid Films, 1981
- Recent developments in amorphous silicon solar cellsSolar Energy Materials, 1980
- Chemical vapor deposition of transparent electrically conducting layers of indium oxide doped with tinThin Solid Films, 1975