High-Quality Graphenes via a Facile Quenching Method for Field-Effect Transistors
- 20 March 2009
- journal article
- letter
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 9 (4) , 1374-1377
- https://doi.org/10.1021/nl803025e
Abstract
No abstract availableKeywords
This publication has 33 references indexed in Scilit:
- A Chemical Route to Graphene for Device ApplicationsNano Letters, 2007
- Energy Band-Gap Engineering of Graphene NanoribbonsPhysical Review Letters, 2007
- Semiconducting graphene nanostrips with edge disorderApplied Physics Letters, 2007
- The rise of grapheneNature Materials, 2007
- Comparison of performance limits for carbon nanoribbon and carbon nanotube transistorsApplied Physics Letters, 2006
- Electronic Confinement and Coherence in Patterned Epitaxial GrapheneScience, 2006
- Analysis of graphene nanoribbons as a channel material for field-effect transistorsApplied Physics Letters, 2006
- Two-dimensional gas of massless Dirac fermions in grapheneNature, 2005
- Experimental observation of the quantum Hall effect and Berry's phase in grapheneNature, 2005
- Electric Field Effect in Atomically Thin Carbon FilmsScience, 2004