Oxygen effects on arsenic diffusion in silicon dioxide
- 15 January 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (2) , 117-119
- https://doi.org/10.1063/1.89941
Abstract
The diffusion mechanism of arsenic implanted into silicon dioxide is studied by the MeV He+ backscattering method. The diffusion coefficient of elemental arsenic in silicon dioxide is extremely small, i.e., smaller than 1×10−17 cm2/sec at 1200°C. The arsenic diffusivity in silicon dioxide is enhanced by introducing extra oxygen into silicon dioxide from an oxidizing atmosphere or by additional oxygen implantation. Arsenic interacts with the extra oxygen, and an arsenic‐oxygen compound might be formed which has a much larger diffusivity than elemental arsenic.Keywords
This publication has 1 reference indexed in Scilit:
- Range Distribution of Implanted Arsenic in Silicon DioxideJapanese Journal of Applied Physics, 1977