Dynamics of resonantly excited excitons in GaN
- 15 December 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 58 (24) , R15973-R15976
- https://doi.org/10.1103/physrevb.58.r15973
Abstract
We present resonant fs pump-probe reflectance measurements of excitons in wurtzite GaN epilayers at different lattice temperatures. At 4 K we find that the exciton dynamics is dominated by trapping at defects via acoustic-phonon emission on a time scale of 16 ps. At temperatures above 60 K we observe a much longer relaxation component of 375 ps, which is due to radiative recombination of free excitons. The results are in good agreement with theoretical predictions.Keywords
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