Vapor Deposition of Silicon Nitride Film on Silicon and Properties of MNS Diodes
- 1 February 1968
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 7 (2)
- https://doi.org/10.1143/jjap.7.122
Abstract
Silicon nitride film was deposited on silicon by gas phase reaction between SiH4 and NH3 using N2 as the carrier gas and a horizontal resistance-heated furnace at the temperature range of 650 to 950°C. The higher the substrate temperature became, the larger the wave number of the infrared, which corresponds to the maximum absorption. Film deposited at lower temperature always showed the hysteresis of C-V curve, but it almost disappeared by elevating substrate temperature and supplying much amount of ammonia. MNS diode was very stable to the BT-treatment even if it was intentionally contaminated with NaOH. Interface charge density was nearly 1.5×1012e/cm2 which was little dependent of surface treatments before depositing the film, and seemed to be almost determined by the positive charge in nitride film. C-V curve of the diode showed the frequency dependence, which was due to the accumulation of electrons in nitride film near the interface.Keywords
This publication has 5 references indexed in Scilit:
- Some Properties of SiO2 Films Deposited by the Reaction of SiH4 with Water VaporJapanese Journal of Applied Physics, 1967
- Instabilities of MOS StructureJapanese Journal of Applied Physics, 1967
- The Preparation and Properties of Amorphous Silicon Nitride FilmsJournal of the Electrochemical Society, 1967
- Sodium distribution in thermal oxide on silicon by radiochemical and MOS analysisIEEE Transactions on Electron Devices, 1966
- Ion Transport Phenomena in Insulating FilmsJournal of Applied Physics, 1965