Instabilities of MOS Structure

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Abstract
The surface charge density of MOS structure is strongly affected by the bias and temperature (BT) treatment. Ordinary and “clean” MOS diodes are prepared by using the (100) and (111) planes. The results on the “clean” diodes during the BT treatment at high electric field of both polarities show the presence of an electrochemical reaction. It has an activation energy of 11 kcal/mole concerning the generation and disappearance of oxygen vacancy at the silicon to silicon dioxide interface. On the positive BT treatment for the ordinary MOS diodes, an anomalous behavior during the high field treatment is found. This phenomenon is qualitatively explained by assuming another reaction in addition to the oxygen vacancy mechanism and the fixed charge, Sodium ions are speculated as the impurity ions in the silicon dioxide film of the ordinary diodes.