Investigation of Silicon-Silicon Dioxide Interface Using MOS Structure
- 1 February 1966
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 5 (2)
- https://doi.org/10.1143/jjap.5.180
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Ion Transport Phenomena in Insulating FilmsJournal of Applied Physics, 1965
- Stabilization of SiO2 Passivation Layers with P2O5IBM Journal of Research and Development, 1964
- Effect of Temperature and Bias on Glass-Silicon InterfacesIBM Journal of Research and Development, 1964
- Electrochemical Phenomena in Thin Films of Silicon Dioxide on SiliconIBM Journal of Research and Development, 1964
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962