InP HEMT amplifier development for G-band (140-220 GHz) applications
- 11 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 175-177
- https://doi.org/10.1109/iedm.2000.904286
Abstract
In this paper we describe a unique InP HEMT MMIC process that has been developed for the demonstration of the first ever G-band (140-220 GHz) amplifiers. This process combines enhanced InP HEMT profiles with a 70 nm T-gate process and a dry via etch process to achieve a high maximum gain of greater than 8 dB at 200 GHz and the highest gain amplifiers ever demonstrated (15 dB at 215 GHz).Keywords
This publication has 2 references indexed in Scilit:
- Fully passivated W-band InAlAs/InGaAs/InP monolithic low noise amplifiersIEE Proceedings - Microwaves, Antennas and Propagation, 1996
- 0.10 /spl mu/m graded InGaAs channel InP HEMT with 305 GHz f/sub T/ and 340 GHz f/sub max/IEEE Electron Device Letters, 1994