0.10 /spl mu/m graded InGaAs channel InP HEMT with 305 GHz f/sub T/ and 340 GHz f/sub max/
- 1 November 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (11) , 477-479
- https://doi.org/10.1109/55.334673
Abstract
We report here 305 GHz f T , 340 GHz f max , and 1550 mS/mm extrinsic g/sub m/ from a 0.10 μm In/sub x/Ga/sub 1-x/As/In/sub 0.62/Al/sub 0.48/As/InP HEMT with x graded from 0.60 to 0.80. This device has the highest f T yet reported for a 0.10 μm gate length and the highest combination of f T and f max reported for any three-terminal device. This performance is achieved by using a graded-channel design which simultaneously increases the effective indium composition of the channel while optimizing channel thickness.Keywords
This publication has 6 references indexed in Scilit:
- A high-performance delta -doped GaAs/In/sub x/Ga/sub 1-x/As pseudomorphic high electron mobility transistor utilizing a graded In/sub x/Ga/sub 1-x/As channelIEEE Electron Device Letters, 1993
- 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistorsIEEE Transactions on Electron Devices, 1992
- Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTsElectronics Letters, 1991
- Design and experimental characteristics of strained In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x<0.53) HEMTsIEEE Transactions on Electron Devices, 1989
- Low- and high-field transport properties of pseudomorphic InxGa1−xAs/In0.52Al0.48As (0.53≤x≤0.65) modulation-doped heterostructuresJournal of Applied Physics, 1988
- High-performance submicrometer AlInAs-GaInAs HEMT'sIEEE Electron Device Letters, 1988