Filament formation in a tapered GaAlAs optical amplifier
- 10 May 1993
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (19) , 2304-2306
- https://doi.org/10.1063/1.109399
Abstract
Filament formation in a tapered GaAlAs amplifier with an output width of 320 μm is characterized by injecting an input beam with a superimposed sinusoidal intensity modulation (30 μm period, 30% peak-to-peak modulation). Strong seeded filamentation of the output near field, and large far field side lobes are observed for powers above approximately 1 W. Time dependent decay of the main far field lobe, characterized by a time constant of several microseconds, is used to separate the effects of localized carrier density variations from the thermal contribution to intensity and phase distortion of the output beam.Keywords
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