Metal-insulator transition in doped semiconductors
- 1 December 1980
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 42 (6) , 845-858
- https://doi.org/10.1080/01418638008222332
Abstract
The positions and properties of the upper Hubbard band are discussed. The Wigner–Seitz method is used to discuss its position. The metal–insulator transition is represented as an overlap between the two bands; it is shown that this model is compatible with observations of the thermopower. An attempt is made to interpret the transition for highly compensated samples. Hopping conduction is discussed, together with the effect of intersite Coulomb interactions.Keywords
This publication has 31 references indexed in Scilit:
- The dielectric anomaly as the insulator-metal transition is approached from the insulating sidePhilosophical Magazine Part B, 1980
- Clustering in the approach to the metal-insulator transitionPhilosophical Magazine Part B, 1980
- Coulomb gap in disordered systems: computer simulationJournal of Physics C: Solid State Physics, 1979
- Universality aspects of the metal-nonmetal transition in condensed mediaPhysical Review B, 1978
- Threshold conduction in inversion layersJournal of Physics C: Solid State Physics, 1978
- Localisation and conductivity studies on two-dimensional spatially disordered systemsJournal of Physics C: Solid State Physics, 1977
- Coulomb gap in disordered systemsJournal of Physics C: Solid State Physics, 1976
- Dielectric Anomaly and the Metal-Insulator Transition in-Type SiliconPhysical Review Letters, 1975
- Single-Particle Excitations in Magnetic InsulatorsPhysical Review B, 1970
- Compensation Dependence of Impurity Conduction in Antimony-Doped GermaniumPhysical Review B, 1965