High-speed photoconductivity and infrared to visible up-conversion in GaP light-emitting diodes
- 1 October 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (7) , 711-713
- https://doi.org/10.1063/1.95390
Abstract
In GaP:N (Zn,Te) light-emitting diodes extrinsic photoconductivity and infrared to visible up-conversion have been investigated by short laser pulses at 10-μm wavelength. A time constant of the order of 1 ns was observed indicating that free infrared excited hole to bound donor recombination yields the fast response.Keywords
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