The “Quasidirect” Radiative Recombination of Free Holes at Neutral Shallow Donors in GaP
- 1 May 1978
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 87 (1) , 169-177
- https://doi.org/10.1002/pssb.2220870120
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Lineshape analysis of free-electron to bound-hole transitions in electric fieldsSolid State Communications, 1975
- Two‐step excitation of photoluminescence in GaPPhysica Status Solidi (b), 1973
- Photoconductivity Associated with Auger Recombination of Excitons Bound to Neutral Donors in Te-Doped Gallium PhosphideJournal of the Physics Society Japan, 1973
- Electron temperatures deduced from comparative studies of photo- and cathodoexcitation of free-to-bound emissionJournal of Physics C: Solid State Physics, 1972
- Chapter 5 Photoluminescence II: Gallium ArsenidePublished by Elsevier ,1972
- Light-emitting diodesProceedings of the IEEE, 1972
- Low temperature luminescence in GaP at very low excitation densitiesSolid State Communications, 1969
- Radiative Capture by Impurities in SemiconductorsPhysical Review B, 1967
- Absorption and Luminescence of Excitons at Neutral Donors in Gallium PhosphidePhysical Review B, 1967
- Fluorescent Decay Times of Excitons Bound to Isoelectronic Traps in GaP and ZnTePhysical Review B, 1967