Lineshape analysis of free-electron to bound-hole transitions in electric fields
- 15 September 1975
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 17 (6) , 709-711
- https://doi.org/10.1016/0038-1098(75)90391-9
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- Impact Ionization of Donors in Semiconductors as a Tool for Photoluminescence InvestigationsJournal of Applied Physics, 1972
- Effect of Compensation on Breakdown Fields in Homogeneous SemiconductorsPhysical Review B, 1967
- Optical Transitions Involving Impurities in SemiconductorsPhysical Review B, 1963
- Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction bandJournal of Physics and Chemistry of Solids, 1960