An integrated approach for accurate simulation and modeling of the silicide-source/drain structure and the silicide-diffusion contact resistance
- 28 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A model for specific contact resistance applicable for titanium silicide-silicon contactsSolid-State Electronics, 1996
- Process Modeling and Integration of The Salicide Process Module for Sub-Half Micron Technology.MRS Proceedings, 1995
- Titanium disilicide contact resistivity and its impact on 1-µm CMOS circuit performanceIEEE Transactions on Electron Devices, 1987