High power operationof multiquantum well DFB lasers at 1.3 µm
- 3 August 1995
- journal article
- research article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (16) , 1344-1345
- https://doi.org/10.1049/el:19950894
Abstract
130 mW CW singlemode operation of an InGaAsP/InP strained multiquantum well DFB laser at 1.3 µm is reported. The laser showed low threshold current, high quantum efficiency and very good linearity.Keywords
This publication has 4 references indexed in Scilit:
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- High-power and high-speed performance of gain-coupled 1.3 μm strained-layer MQW DFB lasersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-performance λ=1.3 μm InGaAsP-InP strained-layer quantum well lasersJournal of Lightwave Technology, 1994
- Submilliamp threshold current (0.62 mA at 0°C) and high output power (220 mW) 1.5 μm tensile strained InGaAs single quantum well lasersElectronics Letters, 1992