High power quantum-well gain-coupled (GC) DFB lasers at 1.3 μm and 1.55 μm
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Form only given. High power characteristics of InGaAsP quantum-well gain-coupled DFB lasers with a loss grating are presented. Among these are record single-mode (SM) values of 115 mW at 1.3 μm and 95 mW at 1.55 μm. The SM-yield at 20 mW is as high as 66% Author(s) Borchert, B. Corp. Res. & Dev., Siemens AG, Munich, Germany Rieger, J. ; Stegmÿller, B.Keywords
This publication has 5 references indexed in Scilit:
- Dynamic behaviour of complex-coupled DFB laserswith in-phase absorptive gratingElectronics Letters, 1994
- High-temperature (130°C) CW operation of 1.53 μm InGaAsP ridge-waveguide lasers using strained quaternary quantum wellsElectronics Letters, 1993
- Fabrication and characteristics of improved strained quantum-well GaInAlAs gain-coupled DFB lasersElectronics Letters, 1993
- 1.55 μm index/gain coupled DFB lasers with strained layer multiquantum-well active graingElectronics Letters, 1992
- Highly efficient single longitudinal-mode oscillation capability of gain-coupled distributed feedback semiconductor lasers-advantage of asymmetric facet coatingIEEE Photonics Technology Letters, 1992