Electron transport in an AlSb/InAs/GaSb tunnel emitter hot-electron transistor
- 30 October 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (18) , 1891-1893
- https://doi.org/10.1063/1.102163
Abstract
We report preparation of high quality AlSb/InAs/GaSb heterostructures by molecular beam epitaxy. Using this crystal growth technique we have fabricated unipolar AlSb tunnel emitter transistors and used them to explore electron transport as a function of electron injection energy Ei across a 100‐Å‐thick InAs quantum well base. A low‐energy threshold for collector current is observed for Ei>φbc, where φbc is the base/collector potential barrier. A maximum collection efficiency of ∼0.9 is obtained at Ei≂1.5 eV and at larger values of Ei, the collection efficiency decreases due to wave function symmetry and velocity mismatch across the abrupt base/collector heterointerface.Keywords
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