The effect of atomic hydrogen passivation on polycrystalline silicon epitaxial solar cells
- 1 July 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (1) , 63-64
- https://doi.org/10.1063/1.92516
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Effects on the open-circuit voltage of grain boundaries within the junction space-charge region of polycrystalline solar cellsIEEE Electron Device Letters, 1980
- Improvement of polycrystalline silicon solar cells with grain-boundary hydrogenation techniquesApplied Physics Letters, 1980
- Passivation of grain boundaries in polycrystalline siliconApplied Physics Letters, 1979
- Hydrogenation and dehydrogenation of amorphous and crystalline siliconApplied Physics Letters, 1978