Determination of Compensation Ratio in Silicon by an Electron Spin Resonance Method
- 1 July 1965
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 4 (7)
- https://doi.org/10.1143/jjap.4.523
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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- Spin resonance of electrons on donors in p-type siliconJournal of Physics and Chemistry of Solids, 1960
- Shallow Impurity Traps and Electron Transfer Dynamics in-Type Silicon at Liquid Helium TemperaturesPhysical Review Letters, 1960
- Ionized-Impurity Scattering Mobility of Electrons in SiliconPhysical Review B, 1959
- Electron Spin Resonance Experiments on Donors in Silicon. II. Electron Spin Relaxation EffectsPhysical Review B, 1959
- Drift and Conductivity Mobility in SiliconPhysical Review B, 1956
- Electrical Properties of-Type GermaniumPhysical Review B, 1954
- The Hall Coefficient of SemiconductorsPhysical Review B, 1951
- Neutral Impurity Scattering in SemiconductorsPhysical Review B, 1950
- Nuclear InductionPhysical Review B, 1946