Te doping of vapor phase epitaxial GaAs
- 1 December 1980
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 50 (4) , 859-864
- https://doi.org/10.1016/0022-0248(80)90148-7
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- Vapor Phase Epitaxial Growth of Sn‐Doped GaAsJournal of the Electrochemical Society, 1979
- On the role of silicon during growth of vpe GaAs-layersJournal of Electronic Materials, 1976
- Vapor‐Phase Growth of Thin GaAs Multilayer StructuresJournal of the Electrochemical Society, 1976
- Growth of Epitaxial GaAs Structures for High Efficiency IMPATT'sJournal of the Electrochemical Society, 1975
- Submicron Epitaxial Films for GaAs Field Effect TransistorsJournal of the Electrochemical Society, 1973
- Effects of the AsCl[sub 3] Mole Fraction on the Incorporation of Germanium, Silicon, Selenium, and Sulfur into Vapor Grown Epitaxial Layers of GaAsJournal of the Electrochemical Society, 1971
- Diffusion of sulfur in gallium phosphide and gallium arsenideJournal of Physics and Chemistry of Solids, 1970
- Chapter 3 DiffusionPublished by Elsevier ,1968
- The effect of arsenic pressure on impurity diffusion in gallium arsenideJournal of Physics and Chemistry of Solids, 1961
- Diffusion of Tin in Gallium ArsenideJournal of Applied Physics, 1961