Internal Photoemission Measurements in a Metal-Al2O3–Si System
- 1 November 1971
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (12) , 4880-4882
- https://doi.org/10.1063/1.1659868
Abstract
The photoelectric threshold energies for electron photoemission from Al, Au, and Si into a thin layer of Al2O3, deposited on Si by pyrolysis of AlCl3 at 850°C, have been measured and found to be, respectively, 3.05±0.1, 4.0±0.1, and 4.1±0.1 eV (from Si valence band). No hole photocurrent, as reported for plasma-anodization-grown Al2O3, was detectable. An approximate energy-band diagram of the Al–Al2O3–Si system is presented.This publication has 6 references indexed in Scilit:
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