Implant Damage in AlGaAs Based Superlattices and Alloys at 77K
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Aluminum ion-implantation enhanced intermixing of GaAs-AlGaAs quantum-well structuresJournal of Applied Physics, 1988
- Disordering of AlAs-GaAs superlattices by Si and S implantation at different implant temperaturesJournal of Applied Physics, 1986
- Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxesApplied Physics Letters, 1986
- Dose-dependent mixing of AlAs-GaAs superlattices by Si ion implantationApplied Physics Letters, 1986
- Damage Profile in GaAs, AlAs, AlGaAs, and GaAs/AlGaAs Superlattices Induced by Si+-Ion ImplantationJapanese Journal of Applied Physics, 1986
- Effects of Implant Temperature on Disordering of AlAs-GaAs SuperlatticesMRS Proceedings, 1986
- Analyses of implanted superlattices by ion backscattering and X-ray rocking curvesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- The Stopping and Range of Ions in SolidsPublished by Springer Nature ,1982
- Disorder of an AlAs-GaAs superlattice by impurity diffusionApplied Physics Letters, 1981
- Low-temperature epitaxial regrowth of ion-implanted amorphous GaAsApplied Physics Letters, 1980