Damage Profile in GaAs, AlAs, AlGaAs, and GaAs/AlGaAs Superlattices Induced by Si+-Ion Implantation
- 1 May 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (5A) , L391
- https://doi.org/10.1143/jjap.25.l391
Abstract
Rutherford backscattering of 2-MeV He+ with channeling was used to study the damage distribution produced in GaAs, AlAs, Al0.4Ga0.6As, and GaAs/Al x Ga1-x As superlattices by Si+-ion implantation. The results indicate that (1) the amount of damage in Al0.4Ga0.6As is less than that in GaAs, although that in AlAs is almost the same as that in GaAs, and (2) GaAs layers are selectively damaged in superlattice structures independent of Al composition in Al x Ga1-x As.Keywords
This publication has 8 references indexed in Scilit:
- Defect structure and intermixing of ion-implanted AlxGa1−xAs/GaAs superlatticesJournal of Applied Physics, 1986
- Ion-Species Dependence of Interdiffusion in Ion-Implanted GaAs-AlAs SuperlatticesJapanese Journal of Applied Physics, 1985
- Interdiffusion of Al and Ga in Si-Implanted GaAs–AlAs SuperlatticesJapanese Journal of Applied Physics, 1984
- Structural integrity of ion-implanted In0.2Ga0.8As/GaAs strained-layer superlatticeApplied Physics Letters, 1984
- Be-implantation doping of GaAsxP1−x/GaP strained-layer superlatticesApplied Physics Letters, 1984
- Fluence dependence of displacement damage, residual defects, and electrical properties of high-temperature-annealed Se+-implanted GaAsJournal of Applied Physics, 1982
- Disorder of an AlAs-GaAs superlattice by silicon implantationApplied Physics Letters, 1982
- Ion implantation and low-temperature epitaxial regrowth of GaAsJournal of Applied Physics, 1981