Structural integrity of ion-implanted In0.2Ga0.8As/GaAs strained-layer superlattice
- 15 August 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (4) , 382-384
- https://doi.org/10.1063/1.95228
Abstract
The strain and lattice disorder introduced by room temperature implantation (N, Si, Zn) into strained‐layer superlattices (SLS) of In0.2Ga0.8As/ GaAs have been measured by cantilever‐beam techniques and by channeled and random Rutherford backscattering spectrometry. These measurements indicate that a maximum lateral compressive stress of ∼5×109 dyn/cm2 is induced for all the ions at fluences corresponding to deposited energy densities of about 1020 keV/cm3 into collisional processes. The compositional modulation of the SLS is maintained at fluences which exceed the yield stress value even in the presence of additional implantation‐induced stress and significant numbers of atomic displacements.Keywords
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