Multiquantum well structure with an average electron mobility of 4.0×106 cm2/V s
- 7 September 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (10) , 1211-1212
- https://doi.org/10.1063/1.107597
Abstract
We report a modulation‐doped multiquantum well structure which suppresses the usual ambient light effect associated with modulation doping. Ten GaAs quantum wells 300‐Å wide are symmetrically modulation doped using Si δ doping at the center of 3600‐Å‐wide Al0.1Ga0.9As barriers. The low field mobility of each well is 4.0×106 cm/V s at a density of 6.4×1010 cm−2 measured at 0.3 K either in the dark, or during, or after, exposure to light. This mobility is an order of magnitude improvement over previous work on multiwells.Keywords
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