Interface roughness scattering in GaAs/AlAs quantum wells
- 7 December 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (23) , 1934-1936
- https://doi.org/10.1063/1.98305
Abstract
We study experimentally and theoretically the influence of interface roughness on the mobility of two‐dimensional electrons in modulation‐doped AlAs/GaAs quantum wells. It is shown that interface roughness scattering is the dominant scattering mechanism in thin quantum wells with a well thickness LwL6w, reaching 2×103 cm2/V s at Lw∼55 Å. From detailed comparison between theory and experiment, it is determined that the ‘‘GaAs‐on‐AlAs’’ interface grown by molecular beam epitaxy has a roughness with the height of 3–5 Å and a lateral size of 50–70 Å.Keywords
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