Reaction Processes for Low Temperature (<150°C) Plasma Enhanced Deposition of Hydrogenated Amorphous Silicon Thin-Film Transistors on Transparent Plastic Substrates
- 1 January 1998
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
This article presents mechanisms for low temperature (<150°C) rf plasma enhanced chemical vapor deposition of silicon and silicon nitride thin films that lead to sufficient electronic quality for thin film transistor (TFT) fabrication and operation. For silicon deposition, hydrogen abstraction and etching, and silicon disproportionation reactions are identified that can lead to optimized hydrogen concentration and bonding environments at 106.Keywords
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