The Preparation and Properties of Silicon Nitride Produced by a Radio Frequency Glow Discharge Reaction of Silane and Nitrogen: Preparation and Properties of Silicon Nitride
- 1 January 1968
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 7 (1) , 88
- https://doi.org/10.1143/jjap.7.88
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The Preparation and Properties of Thin Film Silicon-Nitrogen Compounds Produced by a Radio Frequency Glow Discharge ReactionJournal of the Electrochemical Society, 1967
- The Preparation and Properties of Amorphous Silicon Nitride FilmsJournal of the Electrochemical Society, 1967
- Preparation and Properties of Reactively Sputtered Silicon NitrideJournal of Vacuum Science and Technology, 1967
- Properties of Amorphous Silicon Nitride FilmsJournal of the Electrochemical Society, 1966
- The maximum blocking capability of silicon thyristorsSolid-State Electronics, 1965