Radiation damage and annealing studies of ion-implanted aluminium
- 1 January 1982
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 67 (1-2) , 43-48
- https://doi.org/10.1080/01422448108226567
Abstract
The effect of implantation induced radiation damage on the oxidation of aluminium has been studied using implanted krypton. Annealing studies have revealed a complex recovery process tentatively ascribed to the repair of point defects, dislocation loops and subsequent grain growth. Higher dose (1O17 ions cm−2) xenon implants resulted in implant out-diffusion and surface exfoliation during annealing.Keywords
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