N-channel accumulation layer MOSFET operating at 4 K
Open Access
- 1 December 1990
- journal article
- Published by Elsevier in Cryogenics
- Vol. 30 (12) , 1069-1073
- https://doi.org/10.1016/0011-2275(90)90209-u
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Anomalous behaviour of n-channel MOS transistor characteristics in the temperature range 4.2–14 KSolid-State Electronics, 1989
- Model for hysteresis and kink behavior of MOS transistors operating at 4.2 KIEEE Transactions on Electron Devices, 1988
- Operation of bulk CMOS devices at very low temperaturesIEEE Journal of Solid-State Circuits, 1986
- Influence of the floating substrate potential on the characteristics of ESFI MOS transistorsSolid-State Electronics, 1975
- Microplasmas in SiliconPhysical Review B, 1957