High electron density and mobility in single and double planar doped InGaAs/InAlAs heterojunctions on InP
- 2 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 470-474
- https://doi.org/10.1016/0022-0248(91)91022-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The role of inefficient charge modulations in limiting the current-gain cutoff frequency of the MODFETIEEE Transactions on Electron Devices, 1988
- Characterization of graded interface InxGa1−xAs/In0.52Al0.48As (0.53<x<0.70) structures grown by molecular-beam epitaxyJournal of Applied Physics, 1987
- Electron mobility in modulation-doped heterostructuresPhysical Review B, 1984
- The interpretation of X-ray rocking curves from III–V semiconductor device structuresJournal of Crystal Growth, 1984
- Subbands and charge control in a two-dimensional electron gas field-effect transistorApplied Physics Letters, 1984