A method to increase the sensitivity of temperature measurements of current-carrying microelectronic components
- 1 March 1991
- journal article
- research article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 62 (3) , 805-809
- https://doi.org/10.1063/1.1142088
Abstract
The spatially resolved measurement of current‐induced temperature changes in current‐carrying microelectronic components is described theoretically and experimentally. A method to increase the sensitivity of such measurements in comparison with thermoreflectance is explained.Keywords
This publication has 4 references indexed in Scilit:
- Optical Beam Induced Currents: Investigations of Integrated Circuits Using Different Excitation WavelengthsJournal of Modern Optics, 1989
- Temperature Dependence of Ellipsometric Angles of SiliconPhysica Status Solidi (a), 1987
- Photo– and Joule-Displacement MicroscopyPhysics Bulletin, 1987
- Thermal and plasma wave depth profiling in siliconApplied Physics Letters, 1985