Numerical Study on Shape Transformation of Silicon Trenches by High-Temperature Hydrogen Annealing
- 1 September 2004
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 43 (9R)
- https://doi.org/10.1143/jjap.43.5937
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Investigation of Shape Transformation of Silicon Trenches during Hydrogen AnnealingJapanese Journal of Applied Physics, 2004
- Behavior of trench surface by H2 annealing for reliable trench gate oxideJournal of Crystal Growth, 2003
- Micro-structure Transformation of Silicon: A Newly Developed Transformation Technology for Patterning Silicon Surfaces using the Surface Migration of Silicon Atoms by Hydrogen AnnealingJapanese Journal of Applied Physics, 2000
- Si(001) surface variation with annealing in ambientPhysical Review B, 1998
- Adsorption and Diffusion of Si Atoms on the H-Terminated Si(001) Surface: Si Migration Assisted by H MobilityPhysical Review Letters, 1997
- Step Permeability and the Relaxation of Biperiodic Gratings on Si(001)Physical Review Letters, 1997
- Effects of hydrogen impurities on the diffusion, nucleation, and growth of Si on Si(001)Physical Review B, 1995
- Equilibrium shape of SiPhysical Review Letters, 1993
- Structure of Si(100)H: Dependence on the H chemical potentialPhysical Review B, 1991
- Theory of Thermal GroovingJournal of Applied Physics, 1957