Resonance impact ionization in superlattices
- 30 June 1982
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (6) , 491-492
- https://doi.org/10.1016/0038-1101(82)90162-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Resonant enhancement of impact in Ga1−xAlxSbApplied Physics Letters, 1980
- Impact ionisation in multilayered heterojunction structuresElectronics Letters, 1980
- Electronic properties of the AlAs-GaAs (001) interface and superlatticePhysical Review B, 1979
- InAs-GaSb superlattice energy structure and its semiconductor-semimetal transitionPhysical Review B, 1978
- Effects of cation order on the energy bands of GaAs-AAs heterostructuresSolid State Communications, 1978