Control of Co flux through ternary compound for the formation of epitaxial CoSi2 using Co/Ti/Si system
- 2 December 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (23) , 3498-3500
- https://doi.org/10.1063/1.117224
Abstract
A ternary compound of Co3Ti2Si is suggested as reaction barrier for the formation of epitaxial CoSi2 in the Co/Ti/Si system. It has a role to control Co diffusion to the Si substrate, followed by formation of CoSi2. After Co3Ti2Si was formed, CoO and Ti oxide were formed at surface, depending on Ti thickness. In the case of Ti oxide being at surface, the outdiffusion of Ti in ternary compound was accelerated. Then, the decomposition of Co3Ti2Si occurred by reaction with Ti oxide, resulting in uniform epitaxial CoSi2. However, in the case of CoO being at surface, the Ti outdiffusion was suppressed, followed by thermally decomposition of Co3Ti2Si. This caused nonuniform Co supply to form nonuniform CoSi2.Keywords
This publication has 7 references indexed in Scilit:
- In situ x-ray diffraction study of the role of annealing ambient in epitaxial CoSi2 growth from Co/Ti bilayers on Si(001)Applied Physics Letters, 1995
- Enhanced hot-carrier spontaneous and stimulated recombination in a photopumped vertical cavity AlxGa1−xAs–GaAs quantum well heterostructure with multiple top and bottom native oxide mirrorsApplied Physics Letters, 1995
- Epitaxial growth of CoSi2 on both (111) and (100) Si substrates by multistep annealing of a ternary Co/Ti/Si systemJournal of Applied Physics, 1993
- Epitaxial CoSi2 Film Formation on (100) Si by Annealing of Co/Ti/Si Structure in N2MRS Proceedings, 1993
- Nanoscale CoSi2 contact layer growth from deposited Co/Ti multilayers on Si substratesApplied Physics Letters, 1992
- Formation of epitaxial CoSi2 films on (001) silicon using Ti-Co alloy and bimetal source materialsJournal of Applied Physics, 1991
- Growth of epitaxial CoSi2 on (100)SiApplied Physics Letters, 1991