Ion-Implanted K-Band GaAs Power FET
- 23 March 2005
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 81, 46-48
- https://doi.org/10.1109/mwsym.1981.1129815
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Improvement of the drain breakdown voltage of GaAs power MESFET's by a simple recess structureIEEE Transactions on Electron Devices, 1978
- Stencil technique for the preparation of thin-film Josephson devicesJournal of Vacuum Science and Technology, 1978
- Intentional side etching to achieve low-noise GaAs f.e.t.Electronics Letters, 1977