Surface versus bulk nucleated oxidation-induced stacking faults in silicon wafers
- 30 June 1977
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 38 (3) , 359-363
- https://doi.org/10.1016/0022-0248(77)90356-6
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Sources of oxidation-induced stacking faults in Czochralski silicon wafersApplied Physics Letters, 1976
- The Elimination of Stacking Faults by Preoxidation Gettering of Silicon Wafers: III . Defect Etch Pit Correlation with p‐n Junction LeakageJournal of the Electrochemical Society, 1976
- Stacking Fault Generation Suppression and Grown-In Defect Elimination in Dislocation Free Silicon Wafers by HCl OxidationJapanese Journal of Applied Physics, 1976
- X−ray topography of defects produced after heat treatment of dislocation−free silicon containing oxygenJournal of Applied Physics, 1975
- Formation of stacking faults and enhanced diffusion in the oxidation of siliconJournal of Applied Physics, 1974
- Dislocation Etch for (100) Planes in SiliconJournal of the Electrochemical Society, 1972