Sources of oxidation-induced stacking faults in Czochralski silicon wafers
- 1 November 1976
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (9) , 531-533
- https://doi.org/10.1063/1.89174
Abstract
Using optical microscopy/etch pit techniques for the delineation of defects in {100} Czochralski silicon wafers we have made a one-to-one correlation between bulk stacking faults in oxidized wafers and etch hillocks identified at the same sites before oxidation. Transmission electron microscopy of the hillock defects shows them to be clusters of precipitates ranging in size from 0.01 to 0.3 μm. A discussion of these stacking-fault nucleation sites in light of previous work on ’’swirl’’ defects in float-zone wafers and attempts at preoxidation gettering are also presented along with a model for the formation of the extrinsic stacking faults.Keywords
This publication has 15 references indexed in Scilit:
- Characterization of structural defects in annealed silicon containing oxygenJournal of Applied Physics, 1976
- The Elimination of Stacking Faults by Preoxidation Gettering of Silicon Wafers: III . Defect Etch Pit Correlation with p‐n Junction LeakageJournal of the Electrochemical Society, 1976
- Elimination of Process‐Induced Stacking Faults by Preoxidation Gettering of Si Wafers: II . ProcessJournal of the Electrochemical Society, 1976
- Elimination of Oxidation‐Induced Stacking Faults by Preoxidation Gettering of Silicon Wafers: I . Phosphorus Diffusion‐Induced Misfit DislocationsJournal of the Electrochemical Society, 1975
- Circular stacking faults in siliconApplied Physics Letters, 1974
- Oxidation-induced stacking faults in silicon. I. Nucleation phenomenonJournal of Applied Physics, 1974
- Stacking faults in (100) epitaxial silicon caused by HF and thermal oxidation and effects on p-n junctionsJournal of Applied Physics, 1972
- Dislocation Etch for (100) Planes in SiliconJournal of the Electrochemical Society, 1972
- Diffraction contrast analysis of two-dimensional defects present in silicon after annealingPhilosophical Magazine, 1966
- On diffraction contrast from inclusionsPhilosophical Magazine, 1963