Device physics and simulation of Metal/Ferroelectric-Film/p-type silicon capacitors
- 30 June 1997
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 36 (1-4) , 95-98
- https://doi.org/10.1016/s0167-9317(97)00023-3
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Physics of the ferroelectric nonvolatile memory field effect transistorJournal of Applied Physics, 1992
- Modeling ferroelectric capacitor switching with asymmetric nonperiodic input signals and arbitrary initial conditionsJournal of Applied Physics, 1991
- Device modeling of ferroelectric capacitorsJournal of Applied Physics, 1990