A statistical model of oxide breakdown based on a physical description of wearout
- 1 January 1992
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 135-138
- https://doi.org/10.1109/iedm.1992.307326
Abstract
The breakdown of oxides has been related to wearout. A model has been developed that described the statistics of breakdown in terms of the wearout that occurred prior to breakdown. TDDB distributions given in the literature were accurately simulated (i) for area dependence, (ii) for both constant voltage and constant current stressing, and (iii) for multi-modal distributions. Defect related breakdown was incorporated by introducing the concept of "degree of wearout". A possible method for determining the reliability of an oxide at operating voltages from the accelerated test results has been developed.Keywords
This publication has 11 references indexed in Scilit:
- High field related thin oxide wearout and breakdownIEEE Transactions on Electron Devices, 1995
- Influence of process parameters on the time-dependent dielectric breakdown of rapid thermally nitrided and reoxidized nitrided thin SiO2Applied Physics Letters, 1992
- Influence of localized latent defects on electrical breakdown of thin insulatorsIEEE Transactions on Electron Devices, 1991
- Modeling and characterization of gate oxide reliabilityIEEE Transactions on Electron Devices, 1988
- The effect of hydrogen on trap generation, positive charge trapping, and time-dependent dielectric breakdown of gate oxidesIEEE Electron Device Letters, 1988
- SiO2-induced substrate current and its relation to positive charge in field-effect transistorsJournal of Applied Physics, 1986
- Dynamic model of trapping-detrapping in SiO2Journal of Applied Physics, 1985
- Electrical breakdown in thin gate and tunneling oxidesIEEE Transactions on Electron Devices, 1985
- Dielectric breakdown in electrically stressed thin films of thermal SiO2Journal of Applied Physics, 1978
- Current runaway in insulators affected by impact ionization and recombinationJournal of Applied Physics, 1976