Influence of process parameters on the time-dependent dielectric breakdown of rapid thermally nitrided and reoxidized nitrided thin SiO2
- 23 March 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (12) , 1489-1491
- https://doi.org/10.1063/1.107280
Abstract
We report the impact of rapid thermal nitridation (RTN) and subsequent reoxidation (RTO) on the time‐dependent dielectric breakdown of thin‐gate oxides. The effect of RTN and RTO conditions on intrinsic and defect‐related dielectric breakdown is investigated. These breakdown characteristics are correlated with compositional changes in the oxide during RTN and RTO. An optimal RTN/RTO gate oxide with higher charge‐to‐breakdown and lower defect density than pure SiO2 is reported.Keywords
This publication has 14 references indexed in Scilit:
- Characterization of charge trapping and high-field endurance for 15-nm thermally nitrided oxidesIEEE Transactions on Electron Devices, 1991
- Mechanism of rapid thermal nitridation of thin oxidesJournal of Applied Physics, 1990
- Channel hot-carrier stressing of reoxidized nitrided silicon dioxideIEEE Transactions on Electron Devices, 1990
- Charge trapping properties in thin oxynitride gate dielectrics prepared by rapid thermal processingApplied Physics Letters, 1990
- Study of the SiO2/Si interface endurance property during rapid thermal nitridation and reoxidation processingApplied Physics Letters, 1989
- Short- and long-term reliability of nitrided oxide MISFETsIEEE Transactions on Electron Devices, 1988
- Optimization of low-pressure nitridation/reoxidation of SiO/sub 2/ for scaled MOS devicesIEEE Transactions on Electron Devices, 1988
- Rapid thermal nitridation of SiO2 for nitroxide thin dielectricsApplied Physics Letters, 1985
- Viscous flow of thermal SiO2Applied Physics Letters, 1977
- Nitrogen-silicon reaction and its influence on the dielectric strength of thermal silicon dioxideApplied Physics Letters, 1975