Charge trapping properties in thin oxynitride gate dielectrics prepared by rapid thermal processing
- 5 March 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (10) , 979-981
- https://doi.org/10.1063/1.103273
Abstract
In this letter, effects of post-nitridation anneals on charge trapping properties and charge-to-breakdown (Qbd) of thin (∼8.6 nm) rapidly thermal nitrided (RTN) gate SiO2 have been studied. Post-nitridation anneals consist of either rapid thermal reoxidation (RTO) in pure O2 or rapid thermal anneal (RTA) in pure N2 ambient. Both the gate voltage shift (ΔVg) and flatband voltage shift (ΔVfb) have been used to characterize the charge trapping properties under Fowler–Nordheim electron injection. It is found that both RTO and RTA reduce ΔVfb and/or ΔVg resulting from the reduction of trapped electrons as well as high-field stress-induced positive charge generation. Positive charge generation resulting from either donor-type interface state generation or trapped holes is discussed. Qbd of RTN SiO2 has been improved after RTO, and can be even larger than that of the thermal SiO2. RTA of RTN SiO2 in N2 also improves Qbd; however, the charge trapping behavior is different from that of RTO/RTN SiO2. The physical mechanism is discussed to account for the observation.Keywords
This publication has 9 references indexed in Scilit:
- Electrical and physical properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processingIEEE Transactions on Electron Devices, 1989
- Metal-oxide-semiconductor characteristics of rapid thermal nitrided thin oxidesApplied Physics Letters, 1988
- Common origin for electron and hole traps in MOS devicesIEEE Transactions on Electron Devices, 1987
- Effects of thermal nitridation on the trapping characteristics of SiO2 filmsSolid-State Electronics, 1987
- Reduction of electron and hole trapping in SiO2 by rapid thermal annealingApplied Physics Letters, 1984
- MOSFET degradation due to stressing of thin oxideIEEE Transactions on Electron Devices, 1984
- On physical models for gate oxide breakdownIEEE Electron Device Letters, 1984
- Radiation effects in nitrided oxidesIEEE Electron Device Letters, 1983
- Effects of avalanche injection of electrons into silicon dioxide—generation of fast and slow interface statesJournal of Applied Physics, 1981