Effects of avalanche injection of electrons into silicon dioxide—generation of fast and slow interface states
- 1 October 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (10) , 6231-6240
- https://doi.org/10.1063/1.328565
Abstract
In the process of avalanche injection of electrons into silicon dioxide, besides electron trapping in the bulk of the oxide, there are slow and fast interface states generated. The slow states are donors and positively charged when empty. Together with positive charge in the interface states, they compensate the negative bulk charge to give the turn-around effect. The final C-V curve is due to a complex sum of different charge components. The slow states can be discharged when heated under +5 V or higher biases at 160 °C or above. The final charge state is only semipermanent. Fast interface states are also annealed in the process, and the anneal is enhanced by a positive bias. Bulk trapped electrons are minimally perturbed by the anneal. It is postulated that the slow states may communicate with silicon through the fast interface states in a thermally activated process. In order to study bulk electron trapping, avalanche injection should be carried out at elevated temperatures.This publication has 36 references indexed in Scilit:
- Electron trapping and detrapping characteristics of arsenic-implanted SiO2 layersJournal of Applied Physics, 1980
- Electron trapping in SiO2 at 295 and 77 °KJournal of Applied Physics, 1979
- Radiation damage in silicon dioxide films exposed to reactive ion etchingJournal of Applied Physics, 1979
- Centroid location of implanted ions in the SiO2 layer of MOS structures using the photo I-V technique)Journal of Applied Physics, 1978
- Electron trapping in electron-beam irradiated SiO2Journal of Applied Physics, 1978
- Electron-trapping characteristics of W in SiO2Journal of Applied Physics, 1977
- Determination of insulator bulk trapped charge densities and centroids from photocurrent-voltage charactersitcs of MOS structuresJournal of Applied Physics, 1976
- Capture of electrons into Na+-related trapping sites in the SiO2 layer of MOS structures at 77 °KJournal of Applied Physics, 1976
- Electron trapping by radiation-induced charge in MOS devicesJournal of Applied Physics, 1976
- Electrochemical Charging of Thermal SiO2 Films by Injected Electron CurrentsJournal of Applied Physics, 1971