Electron-trapping characteristics of W in SiO2
- 1 August 1977
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (8) , 3425-3427
- https://doi.org/10.1063/1.324186
Abstract
The electron‐trapping characteristics of W in SiO2 have been studied using evaporated and ion‐implanted W. The evaporated W results indicate a trapping cross section varying from 1.56×10−14 to 4.62×10−14 cm2 depending on the evaporation time. The cross section of the implanted W is 1.06×10−15 cm2. Thermal‐detrapping measurements indicate an activation energy of 0.9 eV, whereas optical detrapping is not observed for light energies up to 6 eV. It is not understood why there is this large discrepancy of results. It is also interesting to note that Powell and Beairsto measured a barrier height of 3.6 eV for the W‐SiO2 interface.This publication has 7 references indexed in Scilit:
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