Properties of the tungsten-silicon dioxide interface
- 28 February 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (2) , 265-267
- https://doi.org/10.1016/0038-1101(73)90036-1
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Photoinjection into SiO2: Use of Optical Interference to Determine Electron and Hole ContributionsJournal of Applied Physics, 1969
- Barrier energies in metal-silicon dioxide-silicon structuresJournal of Physics and Chemistry of Solids, 1966
- Photoemission of Electrons from Metals into Silicon DioxideJournal of Applied Physics, 1966
- Energy Distribution of Photoelectrons from Polycrystalline TungstenPhysical Review B, 1948