Orientation-dependent strain tolerance of amorphous silicon transistors and pixel circuits for elastic organic light-emitting diode displays
- 12 January 2005
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (3) , 033504
- https://doi.org/10.1063/1.1852729
Abstract
We examine the orientation dependence of strain-induced shifts in current and mobility of hydrogenated amorphous silicon thin-film transistors (TFTs). Longitudinal and transverse TFT mirrors are presented for design of strain-tolerant -compensating pixel driver circuits for active-matrix organic light-emitting diode displays.
Keywords
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