Low Temperature PECVD Silicon Oxide For Devices And Circuits On Flexible Substrates
- 1 January 2003
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Density gradient in SiO2 films on silicon as revealed by positron annihilation spectroscopyApplied Surface Science, 2002
- Amorphous silicon nitride deposited at 120 °C for organic light emitting display-thin film transistor arrays on plastic substratesJournal of Vacuum Science & Technology A, 2002
- Dielectric performance of low temperature silicon nitride films in a-Si:H TFTsJournal of Non-Crystalline Solids, 2002
- Deposition of silicon alloys in an integrated distributed electron cyclotron resonance reactor: Oxide, nitride, oxinitrides, and multilayer structuresJournal of Vacuum Science & Technology A, 2002
- 150°C Amorphous Silicon Thin-Film Transistor Technology for Polyimide SubstratesJournal of the Electrochemical Society, 2001
- High quality low temperature DPECVD silicon dioxideJournal of Non-Crystalline Solids, 1997
- Determination of the activation energy for the heterogeneous nucleation of misfit dislocations in Si1−xGex/Si deposited by selective epitaxyApplied Physics Letters, 1997
- Characteristics of low-temperature and low-energy plasma-enhanced chemical vapor deposited SiO2Journal of Applied Physics, 1993
- The physics of amorphous-silicon thin-film transistorsIEEE Transactions on Electron Devices, 1989
- Plasma enhanced chemical vapor deposition: Differences between direct and remote plasma excitationJournal of Vacuum Science & Technology A, 1987