The physics of amorphous-silicon thin-film transistors
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (12) , 2753-2763
- https://doi.org/10.1109/16.40933
Abstract
No abstract availableThis publication has 44 references indexed in Scilit:
- Deep trapping controlled switching characteristics in amorphous silicon thin-film transistorsJournal of Applied Physics, 1989
- Numerical Analysis of the Dynamic Characteristics of Amorphous Silicon Thin-Film TransistorsJapanese Journal of Applied Physics, 1988
- Hole carrier drift-mobility measurements in a-Si: H, and the shape of the valence-band tailPhilosophical Magazine Part B, 1988
- Charge trapping effects in amorphous silicon/silicon nitride thin film transistorsJournal of Non-Crystalline Solids, 1987
- Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The role of hydrogenPhysical Review B, 1987
- Instability mechanism in hydrogenated amorphous silicon thin-film transistorsApplied Physics Letters, 1987
- Dynamic Characteristics of Amorphous Silicon Thin Film TransistorsMRS Proceedings, 1987
- Fast and slow states at the interface of amorphous silicon and silicon nitrideApplied Physics Letters, 1986
- Metastable Defects in Amorphous-Silicon Thin-Film TransistorsPhysical Review Letters, 1986
- Charge trapping instabilities in amorphous silicon-silicon nitride thin-film transistorsApplied Physics Letters, 1983