Numerical Analysis of the Dynamic Characteristics of Amorphous Silicon Thin-Film Transistors

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Abstract
The dynamic characteristics of amorphous silicon thin-film transistors have been analyzed numerically. Electrons accumulated at the semiconductor/gate-insulator interface move toward the opposite interface formed by the semiconductor and substrate as soon as the pulsive gate voltage returns to a low value. All excess electrons are quickly swept out from the active region to either the source or drain, resulting in a large voltage change of the pixel. The gradual decrease of the gate voltage is an effective solution for reducing the voltage change.

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